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    Gaussian Process Regression for Virtual Metrology of Plasma Etch


    Lynn, Shane and Ringwood, John and MacGearailt, Niall (2012) Gaussian Process Regression for Virtual Metrology of Plasma Etch. In: Irish Signals and Systems Conference 2010, June, 2010, Cork.

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    Abstract

    Plasma etch is a complex semiconductor manufacturing process in which material is removed from the surface of a silicon wafer using a gas in plasma form. As the process etch rate cannot be measured easily during or after processing, virtual metrology is employed to predict the etch rate instantly using ancillary process variables. Virtual metrology is the prediction of metrology variables using other easily accessible variables and mathematical models. This paper investigates the use of Gaussian process regression as a virtual metrology modelling technique for plasma etch data.

    Item Type: Conference or Workshop Item (Paper)
    Keywords: Plasma etch; virtual metrology; Gaussian process regression;
    Academic Unit: Faculty of Science and Engineering > Electronic Engineering
    Item ID: 3617
    Depositing User: Professor John Ringwood
    Date Deposited: 01 May 2012 14:04
    Refereed: Yes
    URI:

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