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    Uniaxial stress studies of the Be pair bound exciton absorption spectrum in silicon


    Mulligan, F.J. and Henry, M.O. and Moloney, K.A. and Treacy, J. and Lightowlers, E.C. (1984) Uniaxial stress studies of the Be pair bound exciton absorption spectrum in silicon. Journal of Physics C: Solid State Physics, 17. pp. 6245-6251.

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    Abstract

    The authors report the results of preliminary uniaxial stress studies of the beryllium pair isoelectronic bound exciton absorption spectrum in silicon. The results confirm that the exciton behaves as an isoelectronic acceptor.

    Item Type: Article
    Keywords: Uniaxial stress studies; Be pair; silicon;
    Academic Unit: Faculty of Science and Engineering > Experimental Physics
    Item ID: 814
    Depositing User: Dr. Frank Mulligan
    Date Deposited: 30 Nov 2007
    Journal or Publication Title: Journal of Physics C: Solid State Physics
    Publisher: The Institute of Physics; IOP Publishing Ltd.
    Refereed: Yes
    URI:

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