Keville, Bernard and Iordanov, Petar and Ringwood, John and Doherty, Sean and Faulkner, Ronan and Soberon, Felipe and McCarter, Angus (2006) On the modelling and closed loop control of an inductively coupled plasma chamber. In: IFAC Workshop on Advanced Process Control for Semiconductor Manufacturing, December 2006, Singapore.

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Abstract

As a first step towards real time, multivariable control of an argon/ oxygen plasma, the implementation of real time control of ion flux in an inductively coupled argon plasma through modulation of the RF power is described. It is demonstrated that an elementary PID controller does not guarantee stable control of ion flux over a range of operating points and hence that more elaborate control strategies must be considered. The design and testing of control algorithms is facilitated by suitable dynamical models of a process. A model of the inductively coupled plasma chamber which is suitable for control simulations is described. Ongoing and future work are discussed.

Item Type:	Conference or Workshop Item (Paper)
Keywords:	semiconductor manufacturing; plasma process; etching; closed loop control;
Academic Unit:	Faculty of Science and Engineering > Electronic Engineering
Item ID:	9496
Depositing User:	Professor John Ringwood
Date Deposited:	22 May 2018 15:42
Refereed:	Yes
URI:
Use Licence:	This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available here

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