McGuigan, Kevin and McGlynn, Patrick and Ó Cairbre, Fiacre and Love, J. and Henry, M. (2000) Piezo-spectroscopic induced perturbations for defects in cubic crystals under uniaxial stress applied along arbitrary low-symmetry crystal directions. Journal of Physics: Condensed Matter, 12 (7055). ISSN 0953-8984

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Abstract

A modification to supplement the experimental procedure required to identify the symmetry of point and axial defects in silicon via photoluminescent piezo-spectroscopy is reported. The modification requires that uniaxial stress be applied along a crystal direction of very low symmetry such that all orientational degeneracy is removed. Theoretical shift rate equations for all orientationally degenerate transitions and electronically degenerate states in a tetrahedral host crystal are calculated for stress applied along an arbitrary direction (X Y Z). These calculations are corroborated against the predictions of previous work and are used to successfully predict the stress induced splitting of the 983.21 MeV CdA line in silicon under stress along the (1 3 6) crystal axis. The advantages this low-symmetry-axis perturbation-spectroscopy (LSAPS) technique offers in conjunction with standard uniaxial stress analysis techniques are discussed.

Item Type:	Article
Additional Information:	Cite as: K G McGuigan et al 2000 J. Phys.: Condens. Matter 12 7055
Keywords:	Photoluminescent piezo-spectroscopy; silicon; defects; cubic crystals; uniaxial stress;
Academic Unit:	Faculty of Science and Engineering > Mathematics and Statistics
Item ID:	10091
Identification Number:	https://doi.org/10.1088/0953-8984/12/31/307
Depositing User:	Dr. Fiacre O Cairbre
Date Deposited:	11 Oct 2018 14:07
Journal or Publication Title:	Journal of Physics: Condensed Matter
Publisher:	Institute of Physics
Refereed:	Yes
URI:	http://iopscience.iop.org
Use Licence:	This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available here

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