Lynn, Shane and Ringwood, John and Ragnoli, Emanuele and McLoone, Sean F. and MacGearailt, Niall (2009) Virtual Metrology for Plasma Etch using Tool Variables. Advanced Semiconductor Manufacturing Conference, 2009. . pp. 143-148. ISSN 1078-8743

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Abstract

This paper presents work carried out with data from an industrial plasma etch process. Etch tool parameters, available during wafer processing time, are used to predict wafer etch rate. These parameters include variables such as power, pressure, temperature, and RF measurement. A number of variable selection techniques are examined, and a novel piecewise modelling effort is discussed. The achievable accuracy and complexity trade-offs of plasma etch modelling are discussed in detail.

Item Type:	Article
Keywords:	Virtual Metrology; Plasma Etch; Tool Variables; Plasma materials processing;
Academic Unit:	Faculty of Science and Engineering > Electronic Engineering
Item ID:	1934
Depositing User:	Professor John Ringwood
Date Deposited:	19 May 2010 13:51
Journal or Publication Title:	Advanced Semiconductor Manufacturing Conference, 2009.
Publisher:	IEEE
Refereed:	Yes
URI:
Use Licence:	This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available here

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