Lynn, Shane and MacGearailt, Niall and Ringwood, John (2011) Real-time Virtual Metrology and Control of Plasma Electron Density in an Industrial Plasma Etch Chamber. Proceedings of 18th IFAC World Congress. pp. 12060-12065. ISSN 1474-6670

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Abstract

Plasma etching is a semiconductor manufacturing process during which material is removed from the surface of silicon wafers using gases in plasma form. A host of chemical and electrical complexities make the etch process notoriously dicult to model and troublesome to control. This work demonstrates the use of a real-time model predictive control scheme to maintain a consistent plasma electron density in the presence of disturbances to the ground path of the chamber. The electron density is estimated in real time using a virtual metrology model based on plasma impedance measurements. Recursive least squares is used to update the controller model parameters in real time to achieve satisfactory control of electron density over a wide operating space.

Item Type:	Article
Keywords:	Applications in semiconductor manufacturing; Estimation and fault detection; Model predictive and optimization-based control;
Academic Unit:	Faculty of Science and Engineering > Electronic Engineering
Item ID:	3554
Depositing User:	Professor John Ringwood
Date Deposited:	30 Mar 2012 11:52
Journal or Publication Title:	Proceedings of 18th IFAC World Congress
Publisher:	International Federation of Automatic Control (IFAC)
Refereed:	Yes
URI:	Publisher
Use Licence:	This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available here

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