Keville, Bernard, Iordanov, Petar, Ringwood, John, Doherty, Sean, Faulkner, Ronan, Soberon, Felipe and McCarter, Angus (2006) On the modelling and closed loop control of an inductively coupled plasma chamber. In: IFAC Workshop on Advanced Process Control for Semiconductor Manufacturing, December 2006, Singapore.
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Abstract
As a first step towards real time, multivariable control of an argon/
oxygen plasma, the implementation of real time control of ion flux in an
inductively coupled argon plasma through modulation of the RF power is described.
It is demonstrated that an elementary PID controller does not guarantee
stable control of ion flux over a range of operating points and hence that more
elaborate control strategies must be considered. The design and testing of control
algorithms is facilitated by suitable dynamical models of a process. A model of
the inductively coupled plasma chamber which is suitable for control simulations
is described. Ongoing and future work are discussed.
Item Type: | Conference or Workshop Item (Paper) |
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Keywords: | semiconductor manufacturing; plasma process; etching; closed loop control; |
Academic Unit: | Faculty of Science and Engineering > Electronic Engineering |
Item ID: | 9496 |
Depositing User: | Professor John Ringwood |
Date Deposited: | 22 May 2018 15:42 |
Refereed: | Yes |
URI: | https://mural.maynoothuniversity.ie/id/eprint/9496 |
Use Licence: | This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available here |
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