Szczepkowski, Grzegorz and Farrell, Ronan
(2014)
Study of Linearity and Power Consumption
Requirements of CMOS Low Noise Amplifiers in Context of
LTE Systems and Beyond.
ISRN Electronics, 391240.
ISSN 2090-8679
Abstract
This paper presents a study of linearity in wideband CMOS low noise amplifiers (LNA) and its relationship to power consumption
in context of Long Term Evolution (LTE) systems and its future developments. Using proposed figure of merit (FoM) to compare
35 state-of-the-art LNA circuits published over the last decade, the paper explores a dependence between amplifier performance
(i.e., combined linearity, noise figure, and gain) and power consumption. In order to satisfy stringent linearity specifications for
LTE standard (and its likely successors), the paper predicts that LNA FoM increase in the range of +0.2 dB/mW is expected and
will inevitably translate into a significant increase in power consumption—a critical budget planning aspect for handheld devices,
active antenna arrays, and base stations operating in small cells.
| Item Type: |
Article
|
| Keywords: |
Linearity; Power Consumption;
CMOS; Low Noise Amplifiers; LTE Systems; |
| Academic Unit: |
Faculty of Science and Engineering > Electronic Engineering |
| Item ID: |
4960 |
| Identification Number: |
https://doi.org/10.1155/2014/391240 |
| Depositing User: |
Ronan Farrell
|
| Date Deposited: |
19 May 2014 09:58 |
| Journal or Publication Title: |
ISRN Electronics |
| Publisher: |
Hindawi Publishing Corporation |
| Refereed: |
Yes |
| URI: |
|
| Use Licence: |
This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available
here |
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