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    Tracking plasma etch process variations using Principal Component Analysis of OES data.

    Ma, Beibei and McLoone, Sean F. and Ringwood, John (2007) Tracking plasma etch process variations using Principal Component Analysis of OES data. In: ICINCO 2007, 4th International Conference on Information in Control, Automation and Robotics, 9 - 12 May, 2007, Angers, France. (Unpublished)

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    This paper explores the application of principal component analysis (PCA) to the monitoring of within-lot and between-lot plasma variations that occur in a plasma etching chamber used in semiconductor manufacturing, as observed through Optical Emission Spectroscopy (OES) analysis of the chamber exhaust. Using PCA, patterns that are difficult to identify in the 2048-dimension OES data are condensed into a small number of principle components (PCs). It is shown, with the aid of experimental data, that by simply tracking changes in the directions of these PCs both inter-lot and intra-lot patterns can be identified.

    Item Type: Conference or Workshop Item (Paper)
    Keywords: Semiconductor manufacturing; Plasma etching; Metal etching; Optical emission spectroscopy (OES); Principal component analysis (PCA); Batch processing;
    Academic Unit: Faculty of Science and Engineering > Electronic Engineering
    Item ID: 1424
    Depositing User: Professor John Ringwood
    Date Deposited: 08 Jun 2009 13:11
    Refereed: Yes
    Use Licence: This item is available under a Creative Commons Attribution Non Commercial Share Alike Licence (CC BY-NC-SA). Details of this licence are available here

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